dm nh6008sct document number: ds 38138 rev. 2 - 2 1 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct n - channel enhancement mode mosfet product summary b v dss r ds(on) i d t c = + 25c 60 v 8.0 m ? gs = 10 v 1 3 0a description this new generation mosfet is designed to minimize the on - state resistance (r ds(on) ) , yet maintain superior switching performance, making it ideal for high - e fficiency power management applications. applications ? ? ? ? features ? + 175 c C ? C ? ? ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? an automotive - compliant part is available under separate datasheet ( DMNH6008SCTq ) mechanical data ? ? , green molding compound ? ? ? ordering information (note 4 ) part number case packaging dm nh6008s ct to220 ab 50 pieces/tube notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information e quivalent circuit top view pin out configuration top view bottom view 6008s ct = product type marking code yyww = date code marking yy = last two digits of year (ex: 1 6 = 201 6 ) ww = week (01 to 53) to220ab d s g green yyww 6008s ct
dm nh6008sct document number: ds 38138 rev. 2 - 2 2 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 60 v gate - source voltage v gss 20 v continuous drain current (note 5 ) v gs = 10 v steady state t c = +25c t c = + 10 0c i d 130 90 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 200 a maximum continuous body diode f orward current (note 5 ) i s 80 a avalanche current (note 6) l=0.1mh i as 6 2 a avalanche energy (note 6) l=0.1mh e as 190 mj thermal characteristics characteristic symbol value unit power dissipation (note 5 ) t c = + 25c t c = + 100 c p d 210 100 w thermal resistance, junction to case (note 5 ) r j c 0.7 c/w operating and storage temperature range t j , t stg - 55 to + 1 75 c electrical c haracteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 60 v v gs = 0v, i d = 250 a zero gate voltage drain current i dss 1 a v ds = 48 v, v gs = 0v gate - source leakage i gss 1 00 n a v gs = ? 16 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 2 4 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) 6.0 8.0 m ? v gs = 10 v, i d = 20 a diode forward voltage v sd 0.7 1.2 v v gs = 0v, i s = 1 a dynamic characteristics (note 8 ) input capacitance c iss 2 , 596 pf v ds = 30 v, v gs = 0v f = 1.0mhz output capacitance c oss 437 reverse transfer capacitance c rss 118 gate resistance r g 2. 0 ? v ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 10 v ) q g 21 n c ? v d d = 30 v, i d = 20 a total gate charge ( v gs = 4.5 v ) q g 40 gate - source charge q gs 8.3 gate - drain charge q gd 11.8 turn - on delay time t d( on ) 5.7 ns v d d = 30v, v gs = 10 v, r g = 1 ? , i d = 20 a turn - on rise time t r 5.0 turn - off delay time t d( off ) 15.6 turn - off fall time t f 3.4 reverse recovery time t rr 33 ns i f = 20 a, di/dt = 10 0a/ s reverse recovery charge q rr 33 n c notes: 5 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 6 . i a s and e a s rating are based on low frequency and duty cycles to keep t j = + 25 c 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to product testing.
dm nh6008sct document number: ds 38138 rev. 2 - 2 3 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 45.0 50.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 3.5v v gs = 4.0v v gs = 4.5v v gs = 10.0v v gs =5.0v 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 0 5 10 15 20 25 30 35 40 45 50 r ds(on) , drain - source on - resistance (m w d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 10v 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m w gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 20a 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0 5 10 15 20 r ds(on) , drain - source on - resistance ( w d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature t j = - 55 j =25 j =85 j =150 j =125 gs = 10v t j =175 ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 10v, i d = 20a 0 5 10 15 20 0 1 2 3 4 5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v t j = - 55 j =25 j =85 j =125 j =150 j =175
dm nh6008sct document number: ds 38138 rev. 2 - 2 4 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 -50 -25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( w j , junction temperature ( gs = 10v, i d = 20a 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 is, source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c t j = 175 o c 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 2 4 6 8 10 0 10 20 30 40 vgs (v) qg - (nc) figure 11. gate charge v ds = 30v, i d = 20a 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10ms p w =100 s r ds(on) limited p w =1ms p w =100ms t j(max) = 175 c = 25 gs = 10v p w =1s p w =10 s p w =1 s 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 d = 1ma
dm nh6008sct document number: ds 38138 rev. 2 - 2 5 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 0.7
dm nh6008sct document number: ds 38138 rev. 2 - 2 6 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct package outline dimensions please see http://www.diodes.com/ package - outlines.html for the latest version. to220ab to220ab dim min max typ a 3.56 4.82 - a1 0.51 1.39 - a2 2.04 2.92 - b 0.39 1.01 0.81 b2 1.15 1.77 1.24 c 0.356 0.61 - d 14.22 16.51 - d1 8.39 9.01 - d2 11.45 12.87 - e - - 2.54 e1 - - 5.08 e 9.66 10.66 - e1 6.86 8.89 - h1 5.85 6.85 - l 12.70 14.73 - l1 - 6.35 - l2 15.80 16.20 16.00 p 3.54 4.08 - q 2.54 3.42 - all dimensions in mm e q d1 d ?p l1 l e b a1 a h1 c a2 b2 h1 d2 e1 e1 e/2 l2
dm nh6008sct document number: ds 38138 rev. 2 - 2 7 of 7 www.diodes.com june 2016 ? diodes incorporated dm nh6008sct important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreig n trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems witho ut the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices o r systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably exp ected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its s afety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory an d safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by dio des incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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